Effect of resistance feedback on spin torque-induced switching of nanomagnets
arXiv:0904.4159 · doi:10.1016/j.jmmm.2009.05.044
Abstract
In large magnetoresistance devices spin torque-induced changes in resistance can produce GHz current and voltage oscillations which can affect magnetization reversal. In addition, capacitive shunting in large resistance devices can further reduce the current, adversely affecting spin torque switching. Here, we simultaneously solve the Landau-Lifshitz-Gilbert equation with spin torque and the transmission line telegrapher's equations to study the effects of resistance feedback and capacitance on magnetization reversal of both spin valves and magnetic tunnel junctions. While for spin valves parallel (P) to anti-parallel (AP) switching is adversely affected by the resistance feedback due to saturation of the spin torque, in low resistance magnetic tunnel junctions P-AP switching is enhanced. We study the effect of resistance feedback on the switching time of MTJ's, and show that magnetization switching is only affected by capacitive shunting in the pF range.
8 pages
References in corpus (10)
- Measurement of the Spin-Transfer-Torque Vector in Magnetic Tunnel Junctions
- Thermally assisted magnetization reversal in the presence of a spin-transfer torque
- Current-Driven Magnetic Excitations in Permalloy-Based Multilayer Nanopillars
- Anomalous Bias Dependence of Spin Torque in Magnetic Tunnel Junctions
- Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers
- Magnetoresistance and spin-transfer torque in magnetic tunnel junctions
- Ab initio studies of the spin-transfer torque in tunnel junctions
- Coherent control of nanomagnet dynamics via ultrafast spin torque pulses
- Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions
- Macrospin model of incubation delay due to the field-like spin transfer torque