Dependence of tunnel magnetoresistance on ferromagnetic electrode materials in MgO-barrier magnetic tunnel junctions
arXiv:cond-mat/0608551 · doi:10.1016/j.jmmm.2006.10.770
Abstract
We investigated the relationship between the tunnel magnetoresistance (TMR) ratio and the electrode structure in MgO-barrier magnetic tunnel junctions (MTJs). The TMR ratio in a MTJ with Co40Fe40B20 reference and free layers reached 355% at the post-deposition annealing temperature of Ta=400 degree C. When Co50Fe50 or Co90Fe10 is used for the reference layer material, no high TMR ratio was observed. The key to have high TMR ratio is to have highly oriented (001) MgO barrier/CoFeB crystalline electrodes. The highest TMR ratio obtained so far is 450% at Ta = 450 degree C in a pseudo spin-valve MTJ.
6 pages, 2 figures, 1 table. to be published in J. Magn. Magn. Mater
References in corpus (3)
- Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur
- Giant tunnel magnetoresistance and high annealing stability in CoFeB/MgO/CoFeB magnetic tunnel junctions with synthetic pinned layer
- Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering