activity
20052013
most citedDependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur

273 citations · 1.8k across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2013★ 132 cited

Enhanced interface perpendicular magnetic anisotropy in Ta|CoFeB|MgO using nitrogen doped Ta underlayers

Jaivardhan Sinha, Masamitsu Hayashi, Andrew J. Kellock +8

We show that the magnetic characteristics of Ta|CoFeB|MgO magnetic heterostructures are strongly influenced by doping the Ta underlayer with nitrogen. In particular, the saturation…

cond-mat.mtrl-sci2012★ 110 cited

CoFeB Thickness Dependence of Thermal Stability Factor in CoFeB/MgO Perpendicular Magnetic Tunnel Junctions

H. Sato, M. Yamanouchi, K. Miura +4

Thermal stability factor (delta) of recording layer was studied in perpendicular anisotropy CoFeB/MgO magnetic tunnel junctions (p-MTJs) with various CoFeB recording layer thicknes…

cond-mat.mtrl-sci2012★ 151 cited

Domain structure in CoFeB thin films with perpendicular magnetic anisotropy

M. Yamanouchi, A. Jander, P. Dhagat +3

Domain structures in CoFeB-MgO thin films with a perpendicular easy magnetization axis were observed by magneto-optic Kerr-effect microscopy at various temperatures. The domain wal…

cond-mat.mtrl-sci2009★ 140 cited

MgO barrier-perpendicular magnetic tunnel junctions with CoFe/Pd multilayers and ferromagnetic insertion layers

K. Mizunuma, S. Ikeda, J. H. Park +7

The authors studied an effect of ferromagnetic (Co20Fe60B20 or Fe) layer insertion on tunnel magnetoresistance (TMR) properties of MgO-barrier magnetic tunnel junctions (MTJs) with…

cond-mat.mtrl-sci2008★ 93 cited

Current-induced magnetization switching in MgO barrier magnetic tunnel junctions with CoFeB based synthetic ferrimagnetic free layers

Jun Hayakawa, Shoji Ikeda, Katsuya Miura +12

We investigated the effect of using a synthetic ferrimagnetic (SyF) free layer in MgO-based magnetic tunnel junctions (MTJs) on current-induced magnetization switching (CIMS), part…

cond-mat.mtrl-sci2006★ 223 cited

Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magnetic tunnel junctions

Jun Hayakawa, Shoji Ikeda, Young Min Lee +2

We report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5 K in pseudo-spin valve (SV) CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) annea…