Current-induced magnetization switching in MgO barrier based magnetic tunnel junctions with CoFeB/Ru/CoFeB synthetic ferrimagnetic free layer
arXiv:cond-mat/0609306 · doi:10.1143/JJAP.45.L1057
Abstract
We report the intrinsic critical current density (Jc0) in current-induced magnetization switching and the thermal stability factor (E/kBT, where E, kB, and T are the energy potential, the Boltzmann constant, and temperature, respectively) in MgO based magnetic tunnel junctions with a Co40Fe40B20(2nm)/Ru(0.7-2.4nm)/Co40Fe40B20(2nm) synthetic ferrimagnetic (SyF) free layer. We show that Jc0 and E/kBT can be determined by analyzing the average critical current density as a function of coercivity using the Slonczewski's model taking into account thermal fluctuation. We find that high antiferromagnetic coupling between the two CoFeB layers in a SyF free layer results in reduced Jc0 without reducing high E/kBT.
16 pages, 4 figures. Jpn. J. Appl. Phys., in press
References in corpus (6)
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- Spin Transfer Switching and Spin Polarization in Magnetic Tunnel Junctions with Mgo and Alox Barriers
- Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions
- Dependence of tunnel magnetoresistance in MgO based magnetic tunnel junctions on Ar pressure during MgO sputtering
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- Self-consistent calculation of spin transport and magnetization dynamics
- Critical current density for spin transfer torque switching with composite free layer structure
- Half-metallic magnetism and the search for better spin valves
- Role of the Non-Collinear Polarizer Layer in Spin Transfer Torque Switching Processes
- Synthetic Antiferromagnetic Spintronics: Part of a collection of reviews on antiferromagnetic spintronics
- Towards wafer scale inductive characterization of spin transfer torque critical current density of magnetic tunnel junction stacks