Current-driven magnetization switching in CoFeB/MgO/CoFeB magnetic tunnel junctions
arXiv:cond-mat/0510538 · doi:10.1143/JJAP.44.L1267
Abstract
Current-driven magnetization switching in low-resistance Co40Fe40B20/MgO/Co40Fe40B20 magnetic tunnel junctions (MTJs) is reported. The critical-current densities Jc required for current-driven switching in samples annealed at 270C and 300C are found to be as low as 7.8 x 10^5 A/cm^2 and 8.8 x 10^5 A/cm^2 with accompanying tunnel magnetoresistance (TMR) ratios of 49% and 73 %, respectively. Further annealing of the samples at 350C increases TMR ratio to 160 %, while accompanying Jc increases to 2.5 x 10^6 A/cm^2. We attribute the low Jc to the high spin-polarization of tunnel current and small MsV product of the CoFeB single free layer, where Ms is the saturation magnetization and V the volume of the free layer.
13 pages, 5 figures
References in corpus (8)
- Current-driven Magnetization Reversal and Spin Wave Excitations in Co/Cu/Co Pillars
- Observation of spin-transfer switching in deep submicron-sized and low-resistance magnetic tunnel junctions
- Large magnetoresistance in bcc Co/MgO/Co and FeCo/MgO/FeCo tunneling junctions
- Spin-Transfer Effects in Nanoscale Magnetic Tunnel Junctions
- Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperatur
- Adjustable spin torque in magnetic tunnel junctions with two fixed layers
- An Effective Reduction of Critical Current for Current-Induced Magnetization Switching by a Ru Layer Insertion in an Exchange-Biased Spin-Valve
- Thermal Effects on the Magnetic Field Dependence of Spin Transfer Induced Magnetization Reversal
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