Unveiling multiferroic proximity effect in graphene

Abstract

We demonstrate that electronic and magnetic properties of graphene can be tuned via proximity of multiferroic substrate. Our first-principles calculations performed both with and without spin-orbit coupling clearly show that by contacting graphene with bismuth ferrite BiFeO${}_3$ (BFO) film, the spin-dependent electronic structure of graphene is strongly impacted both by the magnetic order and by electric polarization in the underlying BFO. Based on extracted Hamiltonian parameters obtained from the graphene band structure, we propose a concept of six-resistance device based on exploring multiferroic proximity effect giving rise to significant proximity electro- (PER), magneto- (PMR), and multiferroic (PMER) resistance effects. This finding paves a way towards multiferroic control of magnetic properties in two dimensional materials.

arXiv comment20 pages, 4 figures

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Cited by in corpus (7)

• Van der Waals heterostructures for spintronics and opto-spintronics
• Antiferroelectric Altermagnets: Antiferroelectricity Alters Magnets
• Giant asymmetric proximity-induced spin-orbit coupling in twisted graphene/SnTe heterostructure
• Strain engineering of ferromagnetic-graphene-ferroelectric nanostructures
• Ferroelectric switching control of spin current in graphene proximitized by In${}_2$Se${}_3$
• Angular dependence of the interlayer coupling at the interface between two dimensional materials 1T-PtSe${}_2$ and graphene
• Many-body description of two-dimensional van der Waals ferroelectric $\alpha -$In${}_2$Se${}_3$