Widely Tunable Optical and Thermal Properties of Dirac Semimetal CdAs
arXiv:1907.12105 · doi:10.1002/adom.201901192
Abstract
In this paper we report a detailed analysis of the temperature-dependent optical properties of epitaxially grown cadmium arsenide (CdAs), a newly discovered three-dimensional Dirac semimetal. Dynamic Fermi level tuning -- instigated from Pauli-blocking in the linear Dirac cone -- and varying Drude response, generate large variations in the mid and far-infrared optical properties. We demonstrate thermo-optic shifts larger than those of traditional III-V semiconductors, which we attribute to the obtained large thermal expansion coefficient as revealed by first-principles calculations. Electron scattering rate, plasma frequency edge, Fermi level shift, optical conductivity, and electron effective mass analysis of CdAs thin-films are quantified and discussed in detail. Our ab initio density functional study and experimental analysis of epitaxially grown CdAs promise applications for nanophotonic and nanoelectronic devices, such as reconfigurable metamaterials and metasurfaces, nanoscale thermal emitters, and on-chip directional antennas.
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- Tracking ultrafast change of multiterahertz broadband response functions in a photoexcited Dirac semimetal CdAs thin film
- Theory for CdAs thin films in the presence of magnetic fields
- Enhanced Dirac node separation in strained Cd3As2 topological semimetal
- Anomalous electronic energy relaxation and soft phonons in the Dirac semimetal CdAs
- Linear-in-Frequency Optical Conductivity over a broad range in the three-dimensional Dirac semimetal candidate IrInSe