Interband optical conductivity of the [001]-oriented Dirac semimetal Cd3As2

Abstract

We measured the optical reflectivity of [001]-oriented $n$-doped Cd${}_3$As${}_2$ in a broad frequency range (50 - 22000 cm${}^{-1}$) for temperatures from 10 to 300 K. The optical conductivity, $\sigma (\omega )={\sigma }_1(\omega )+\mathrm{i}{\sigma }_2(\omega )$, is isotropic within the (001) plane; its real part follows a power law, ${\sigma }_1(\omega )\propto {\omega }^{1.65}$, in a large interval from 2000 to 8000 cm${}^{-1}$. This behavior is caused by interband transitions between two Dirac bands, which are effectively described by a sublinear dispersion relation, $E(k)\propto |k{|}^{0.6}$. The momentum-averaged Fermi velocity of the carriers in these bands is energy dependent and ranges from $1.2\times 10^5$ to $3\times 10^5$ m/s, depending on the distance from the Dirac points. We detect a gaplike feature in ${\sigma }_1(\omega )$ and associate it with the Fermi level positioned around $100$ meV above the Dirac points.

final version, as published in PRB

References in corpus (6)

• Dirac materials
• Quantum transport evidence for a three-dimensional Dirac semimetal phase in Cd3As2
• Chiral anomaly and optical absorption in Weyl semimetals
• Low frequency optical conductivity in graphene and in other scale-invariant two-band systems
• Transient reflectance of photoexcited Cd${}_3$As${}_2$
• Spectroscopic Signatures of Massless Gap Opening in Graphene

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