Orbital Hall physics in two-dimensional Dirac materials
arXiv:2301.01126 · doi:10.1103/PhysRevB.108.075427
Abstract
Orbitronics has recently emerged as a very active research topic after several proposals aiming to exploit the orbital degree of freedom for charge-free electronics. In this communication, we investigate orbital transport in selected two-dimensional systems to better understand which parameters govern the intra-atomic and inter-atomic contributions to the orbital Hall effect. We study the impact of the gap, the role of the materials' topology and the influence of the disorder on spin and orbital Hall transport. Starting from the Kane-Mele model, we describe how the orbital moment behaves depending on the material's topology and clarify the influence of the gap on the orbital Hall conductivity. We then extend the study to realistic topologically trivial and non-trivial materials, and find that the topology has little qualitative influence on the orbital Hall conductivity. In contrast, we observe that the energy dispersion has a more dramatic impact, especially in the presence of disorder. Remarkably, our results suggest that the intra-atomic orbital Hall current is more robust against scattering than the inter-atomic one, without further impact of the topological properties of the system under consideration.
References in corpus (10)
- Quantum Spin Hall Effect and Topological Phase Transition in HgTe Quantum Wells
- Graphene Spintronics
- Detecting Topological Currents in Graphene Superlattices
- Orbital magnetization in periodic insulators
- Giant Orbital Hall Effect in Transition Metals: Origin of Large Spin and Anomalous Hall Effects
- Quantum Theory of Orbital Magnetization and its Generalization to Interacting Systems
- Orbital Hall effect in bilayer transition metal dichalcogenides: From the intra-atomic approximation to the Bloch states orbital magnetic moment approach
- A new decomposition of the Kubo-Bastin formula
- Graphene on two-dimensional hexagonal BN, AlN, and GaN: Electronic, spin-orbit, and spin relaxation properties
- Electronic transport properties of MoS nanoribbons embedded on butadiene solvent
Cited by in corpus (20)
- Orbital Hall effect and orbital edge states caused by s electrons
- Orbital angular momentum of Bloch electrons: equilibrium formulation, magneto-electric phenomena, and the orbital Hall effect
- Extrinsic Orbital Hall Effect: Orbital Skew Scattering and Crossover Between Diffusive and Intrinsic Orbital Transport
- Orbitronics in Two-dimensional Materials
- Topological orbital Hall effect caused by skyrmions and antiferromagnetic skyrmions
- Orbital Hall Responses in Disordered Topological Materials
- Quantum correction to the orbital Hall effect
- Controlling the orbital Hall effect in gapped bilayer graphene in the terahertz regime
- Non-reciprocity in magnon mediated charge-spin-orbital current interconversion
- Orbital Edelstein effect of electronic itinerant orbital motion at edges
- Ferroelectric polarization controlled orbital Hall conductivity in a higher-order topological insulator: \textit{d1T}-phase monolayer MoS
- Topological Nature of Orbital Chern Insulators
- Orbital Hall effect and topology on a two-dimensional triangular lattice: from bulk to edge
- Universal intrinsic orbital dynamics from Berry curvature in electronic two-band systems
- Spin and Orbital Rashba response in ferroelectric polarized PtSe/MoSe/LiNbO heterostructures
- Orbital Hall Conductivity in a Graphene/Haldane and Haldane/Haldane Bilayers
- Comparing the Extrinsic Orbital Hall Effect in Centrosymmetric and Noncentrosymmetric Systems: Insights from Bilayer Transition Metal Dichalcogenides
- Spin-to-charge conversion in orthorhombic RhSi topological semimetal crystalline thin films
- Orbital Hall effect from orbital magnetic moments of Bloch states: the role of a new correction term
- Orbital Hall effect in spin-3/2 hole-doped semiconductors and its implications for orbitronics