Gate controllable spin pumping in graphene via rotating magnetization

Abstract

We investigate pure spin pumping in graphene by imposing a ferromagnet (F) with rotating magnetization on top of it. Using the generalized scattering approach for adiabatic spin pumping, we obtain the spin current pumped through magnetic graphene to a neighboring normal (N) region. The spin current can be easily controlled by gate voltages and under certain conditions, becomes sufficiently large to be measurable in current experimental setups. In fact it reaches a maximum value when one of the spins are completely filtered due to the vanishing density of states of the corresponding spin species in the ferromagnetic part. Considering an N|F|N structure with a finite ferromagnetic region, it is found that in contrast to the metallic ferromagnetic materials the transverse spin coherence length can be comparable to the length of F denoted by $L$. Subsequently, due to the quantum interferences, the spin current becomes oscillatory function of $JL/\hslash v_F$ in which $J$ is the spin splitting inside F. Finally we show, originated from the controllability of pumped spin into two different normal sides, a profound spin battery effect can be seen in the hybrid N|F|N device.

7 pages, 6 figures

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Cited by in corpus (6)

• Quantum Oscillations of Gilbert Damping in Ferromagnetic/Graphene Bilayer Systems
• Spin Transport and Spin Pump in Graphene-like Materials: Effect of tilt in Dirac cones
• Spin pumping into two-dimensional electron systems
• Wideband and on-chip excitation for dynamical spin injection into graphene
• Adiabatic limit of RKKY range function in one dimension
• Theory of Spin Injection in Two-dimensional Metals with Proximity-Induced Spin-Orbit Coupling