Electrical Control of Exchange Bias Mediated by Graphene

Abstract

The role of graphene in mediating the exchange interaction is theoretically investigated when it is placed between two ferromagnetic dielectric materials. The calculation based on a tight-binding model illustrates that the magnetic interactions at the interfaces affect not only the graphene band structure but also the thermodynamic potential of the system. This induces an indirect exchange interaction between the magnetic layers that can be considered in term of an effective exchange bias field. The analysis clearly indicates a strong dependence of the effective exchange bias on the properties of the mediating layer, revealing an effective mechanism of electrical control even at room temperature. This dependence also results in qualitatively different characteristics for the cases involving mono- and bilayer graphene.

9 pages, 3 figures

References in corpus (8)

• Landau level degeneracy and quantum Hall effect in a graphite bilayer
• Biased bilayer graphene: semiconductor with a gap tunable by electric field effect
• Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
• Towards ferroelectrically-controlled magnetism: Magnetoelectric effect in Fe/BaTiO3 multilayers
• Ab Initio Theory of Gate Induced Gaps in Graphene Bilayers
• Spin transport in proximity induced ferromagnetic graphene
• Mechanisms of exchange bias with multiferroic BiFeO3 epitaxial thin films
• Anomalous Spontaneous Reversal in Magnetic Heterostructures

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• Controlling electron propagation on a topological insulator surface via proximity interactions
• Integrating MBE materials with graphene to induce novel spin-based phenomena
• Voltage induced switching of an antiferromagnetically ordered topological Dirac semimetal
• Spin polarization and magnetoresistance through a ferromagnetic barrier in bilayer graphene
• Edge proximity-induced magnetoresistance and spin polarization in ferromagnetic gated bilayer graphene nanoribbon
• Gate controllable spin pumping in graphene via rotating magnetization
• Ballistic charge transport in chiral-symmetric few-layer graphene