227 citations · 408 across the 17 of their papers we have counts for
17 papers
Room-temperature lasing action in GaN quantum wells in the infrared 1.5 micron region
V. X. Ho, T. M. Al tahtamouni, H. X. Jiang +3
Large-scale optoelectronics integration is strongly limited by the lack of efficient light sources, which could be integrated with the silicon complementary metal-oxide-semiconduct…
Photoluminescence quantum efficiency of Er optical centers in GaN epilayers
V. X. Ho, T. V. Dao, H. X. Jiang +4
We report the quantum efficiency of photoluminescence processes of Er optical centers as well as the thermal quenching mechanism in GaN epilayers prepared by metal-organic chemical…
Excitation Mechanisms of Er Optical Centers in GaN Epilayers
D. K. George, M. Hawkins, M. McLaren +4
We report direct evidence of two mechanisms responsible for the excitation of optically active Er3+ ions in GaN epilayers grown by metal-organic chemical vapor deposition. These me…
Strong Substrate Dependence of Joule Heating in Graphene
X. Li, B. D. Kong, J. M. Zavada +1
The Joule heating effect on graphene electronic properties is investigated by using full-band Monte Carlo electron dynamics and three-dimensional heat transfer simulations self-con…
Weak ferromagnetism of antiferromagnetic domains in graphene with defects
Y. G. Semenov, J. M. Zavada, K. W. Kim
Magnetic properties of graphene with randomly distributed magnetic defects/vacancies are studied in terms of the Kondo Hamiltonian in the mean field approximation. It has been show…
Electron-Phonon Interactions in Bilayer Graphene: A First Principles Approach
K. M. Borysenko, J. T. Mullen, X. Li +4
Density functional perturbation theory is used to analyze electron-phonon interaction in bilayer graphene. The results show that phonon scattering in bilayer graphene bears more re…