Ultrafast Spin Injection in Graphene via Dynamical Carrier Filtering at Transition Metal Dichalcogenide Interfaces
arXiv:2509.08339 · doi:10.1103/xslx-wnb6
Abstract
We report a real-time first-principles study of ultrafast spin injection in a WSe-graphene heterobilayer under circularly polarized laser irradiation, using time-dependent density functional theory. Contrary to conventional expectations, spin transfer into graphene is not a passive process but is actively driven by spin-selective carrier filtering at the interface. Spin-polarized carriers generated in the WSe layer induce a preferential migration of opposite-spin carriers from graphene, which results in net spin magnetization in graphene. This process is governed by interlayer band offsets, density-of-state asymmetry, and Pauli blocking. These findings indicate a microscopic mechanism of spin injection in non-magnetic systems and identify a guiding principle for the design of ultrafast opto-spintronic functionalities in van der Waals heterostructures.
10 pages, 9 figures
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