Strength of effective Coulomb interaction in two-dimensional transition-metal Halides MX and MX (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I)
arXiv:2105.05293 · doi:10.1103/PhysRevMaterials.5.034001
Abstract
We calculate the strength of the effective onsite Coulomb interaction (Hubbard ) in two-dimensional (2D) transition-metal (TM) dihalides MX and trihalides MX (M=Ti, V, Cr, Mn, Fe, Co, Ni; X=Cl, Br, I) from first principles using the constrained random-phase approximation. The correlated subspaces are formed from or bands at the Fermi energy. Elimination of the efficient screening taking place in these narrow bands gives rise to sizable interaction parameters U between the localized () electrons. Due to this large Coulomb interaction, we find (with the band width ) in most TM halides, making them strongly correlated materials. Among the metallic TM halides in paramagnetic state, the correlation strength reaches a maximum in NiX and CrX with values much larger than the corresponding values in elementary TMs and other TM compounds. Based on the Stoner model and the calculated and values, we discuss the tendency of the electron spins to order ferromagnetically.
References in corpus (24)
- Energy Gaps in Graphene Nanoribbons
- Control of graphene's properties by reversible hydrogenation
- Graphane: a two-dimensional hydrocarbon
- Graphene Spintronics
- Magnetism in Graphene Induced by Single-Atom Defects
- Electronic States of Graphene Nanoribbons
- Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations
- Room temperature magnetic order on zigzag edges of narrow graphene nanoribbons
- Calculations of Hubbard U from first-principles
- Direct photoluminescence probing of ferromagnetism in monolayer two-dimensional CrBr3
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- Electronic structure and magnetism of transition metal dihalides: bulk to monolayer
- Ferromagnetic van der Waals crystal VI3
- Efficient implementation of the GW approximation within the all-electron FLAPW method
- VI3 - a new layered ferromagnetic semiconductor
- Maximally Localized Wannier Functions within the FLAPW formalism
- NiCl3 Monolayer: Dirac Spin-Gapless Semiconductor and Chern Insulator
- Dynamical Signatures of Edge-State Magnetism on Graphene Nanoribbons
- Bulk properties of van-der-Waals hard ferromagnet VI3
- Combining DFT and Many-Body Methods to Understand Correlated Materials
- Relativistic exchange interactions in CrX (X=Cl, Br, I) monolayers
- Effective Onsite Interaction for Dynamical Mean-Field Theory
- Microscopic origin of ferromagnetism in trihalides CrCl and CrI
- Charge density wave and spin insulating state in single layer 1T-NbS
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- Trigonal Symmetry Breaking and its Electronic Effects in Two-Dimensional Dihalides and Trihalides
- Evidence of Ferroelectricity in an Antiferromagnetic Vanadium Trichloride Monolayer
- Crystal growth engineering and origin of the weak ferromagnetism in antiferromagnetic matrix of orthochromates from - orbital hybridization
- Superexchange and spin-orbit coupling in monolayer and bilayer chromium trihalides
- Enhanced Magnetization by Defect-Assisted Exciton Recombination in Atomically Thin CrCl
- Goodenough-Kanamori-Anderson rules in 2D magnet: A chemical trend in MCl2 with M=V, Mn, and Ni
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