Enhanced Magnetization by Defect-Assisted Exciton Recombination in Atomically Thin CrCl${}_3$

Abstract

Two dimensional (2D) semiconductors present unique opportunities to intertwine optical and magnetic functionalities and to tune these performances through defects and dopants. Here, we integrate exciton pumping into a quantum sensing protocol on nitrogen-vacancy centers in diamond to image the optically-induced transient stray fields in few-layer, antiferromagnetic CrCl${}_3$. We discover that exciton recombination enhances the in-plane magnetization of the CrCl${}_3$ layers, with a predominant effect in the surface monolayers. Concomitantly, time-resolved photoluminescence measurements reveal that nonradiative exciton recombination intensifies in atomically thin CrCl${}_3$ with tightly localized, nearly dipole-forbidden excitons and amplified surface-to-volume ratio. Supported by experiments under controlled surface exposure and density functional theory calculations, we interpret the magnetically enhanced state to result from a defect-assisted Auger recombination that optically activates electron transfer between water vapor related surface impurities and the spin-polarized conduction band. Our work validates defect engineering as a route to enhance intrinsic magnetism in single magnetic layers and opens a novel experimental platform for studying optically-induced, transient magnetism in condensed matter systems.

11 pages, 8 figures

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Cited by in corpus (2)

• Configurable antiferromagnetic domains and lateral exchange bias in atomically thin CrPS4
• Activated Migration of Localized Ligand-Field Excitons in Atomically Thin CrCl3