Scattering from spin-polarized charged impurities in graphene
arXiv:1610.03659 · doi:10.1103/PhysRevB.95.041401
Abstract
We study the spin relaxation of charge carriers in graphene in the presence of spin-polarized charged impurities by calculating the time evolution of initially polarized state. The spin relaxation time shows completely different energy behaviour for short-ranged and long-ranged spin scatterers and can be used to identify the dominant source of spin scattering. Our results agree well with recent experimental findings and indicate that their spin relaxation is likely caused by long-ranged scatterers.
5 pages, 4 figures
References in corpus (11)
- Graphene Spintronics
- Magnetism in Graphene Induced by Single-Atom Defects
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- The Kernel Polynomial Method
- Long spin relaxation times in wafer scale epitaxial graphene on SiC(0001)
- Evidence for spin-flip scattering and local moments in dilute fluorinated graphene
- Real-space calculation of the conductivity tensor for disordered topological matter
- Crossover from quantum to Boltzmann transport in graphene
- Effect of short- and long-range scattering in the conductivity of graphene: Boltzmann approach vs tight-binding calculations
- Spin Relaxation in Single Layer Graphene with Tunable Mobility
- Effect of in-situ deposition of Mg adatoms on spin relaxation in graphene