Exotic spintronic properties of transition-metal monolayers on graphyne
arXiv:2105.12515 · doi:10.1002/adts.202100287
Abstract
The recent discovery of two-dimensional (2D) magnetic materials which are compound of transition metal (TM) with other elements, has opened new avenues for basic research on low-dimensional magnetism and potential applications in spintronics. To further explore new 2D magnets of pure TM is thus of an interesting topic. Based on the first-principles calculations, here we propose a strategy of obtaining monolayer TM magnets, i.e., depositing TM atoms on graphyne (Gy) which has proper hexagonal hollow geometry. We find that TM monolayer with perfect hexagonal geometry can be formed on Gy. The TM monolayer exhibits a wealth of physical properties in dependence of TM species, such as ferromagnetic and antiferromagnetic ground states, as well as intriguing semimetal and half-metal characteristics. We also find that the half-metal characteristics makes the monolayer TM have great potential applications in the horizontal magnetic tunnel junction (MTJ) devices, where the tunneling magnetoresistance can reach as high as 850000%. Our results provide a new framework for obtaining 2D magnets with outstanding spintronic properties.
arXiv comment16 pages, 5 figures
References in corpus (31)
- Electric Field Effect in Atomically Thin Carbon Films
- The SIESTA method for ab initio order-N materials simulation
- Efficient index handling of multidimensional periodic boundary conditions
- Layer-dependent Ferromagnetism in a van der Waals Crystal down to the Monolayer Limit
- Density functional method for nonequilibrium electron transport
- Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
- Half-Metallic Graphene Nanoribbons
- Gate-tunable Room-temperature Ferromagnetism in Two-dimensional FeGeTe
- Graphene Spintronics
- Magnetism in Graphene Induced by Single-Atom Defects
- Prediction and observation of the first antiferromagnetic topological insulator
- Intrinsic magnetic topological insulators in van der Waals layered MnBiTe-family materials
- Spin-half paramagnetism in graphene induced by point defects
- Hydrogen on graphene: Electronic structure, total energy, structural distortions, and magnetism from first-principles calculations
- Magnetic Correlations at Graphene Edges
- On the origin of magnetic anisotropy in two dimensional CrI
- Room-temperature ferromagnetism in graphite driven by 2D networks of point defects
- Strong interface-induced spin-orbit coupling in graphene on WS2
- Graphyne- and Graphdiyne-based Nanoribbons: Density Functional Theory Calculations of Electronic Structures
- One million percent tunnel magnetoresistance in a magnetic van der Waals heterostructure
- Magnetic Moment Formation in Graphene Detected by Scattering of Pure Spin Currents
- Perspectives for Spintronics in 2D Materials
- Point Defects and Localized Excitons in 2D WSe2
- Voltage Control of a van der Waals Spin-Filter Magnetic Tunnel Junction
- Theory of inter-edge superexchange in zigzag edge magnetism
- Low density ferromagnetism in biased bilayer graphene
- Interface induced room-temperature ferromagnetism in hydrogenated epitaxial graphene
- Fermi Liquid Theory of a Fermi Ring
- Topological Dirac states beyond orbitals for silicene on SiC(0001) surface
- The Origin of Half-Metallicity in Conjugated Electron System -- a Study on Transition Metal Doped Graphyne
- Fully spin-polarized quadratic non-Dirac bands realized quantum anomalous Hall effect