Tunable Band Gap in Graphene with a Non-Centrosymmetric Superlattice Potential

Abstract

We show that, if graphene is subjected to the potential from an external superlattice, a band gap develops at the Dirac point provided the superlattice potential has broken inversion symmetry. As a numerical example, we calculate the band structure of graphene in the presence of an external potential due to periodically patterned gates arranged in a triangular graphene superlattice (TGS) with broken inversion symmetry, and find that a band gap is created at both the original and "second generation" Dirac point. The gap can be controlled, in principle, by changing the external potential and the lattice constant of the TGS.

6 figures, Phys. Rev. B 79, 205435

References in corpus (14)

• Energy Band Gap Engineering of Graphene Nanoribbons
• Energy Gaps in Graphene Nanoribbons
• Graphene Nano-Ribbon Electronics
• Substrate-induced bandgap in graphene on hexagonal boron nitride
• Electronic States of Graphene Nanoribbons
• Peculiar Width Dependence of the Electronic Property of Carbon Nanoribbons
• Anisotropic behaviors of massless Dirac fermions in graphene under periodic potential
• Periodically rippled graphene: growth and spatially resolved electronic structure
• Graphene Antidot Lattices - Designed Defects and Spin Qubits
• New Generation of Massless Dirac Fermions in Graphene under External Periodic Potentials
• Graphene Spin Valve Devices
• Midgap states and charge inhomogeneities in corrugated graphene
• Dirac and Klein-Gordon particles in one-dimensional periodic potentials
• Charge Transport and Inhomogeneity near the Charge Neutrality Point in Graphene

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