Tunable Band Gaps of Mono-layer Hexagonal BNC Heterostructures
arXiv:1105.3776 · doi:10.1016/j.physe.2012.04.011
Abstract
Bandgap engineering by substituting C with B and N atoms in graphene has been shown to be a promising way to improve semiconducting properties of graphene. Such hybridized monolayers consisting of hexagonal BN phases in graphene (h-BNC) have been recently synthesized and char- acterized. In this paper, we present an ab initio density functional theory (DFT)-based study of h-BN domain size effect on band gap of mono-layer h-BNC heterostructures. The atomic structures, electronic band structures, density of states and electron localization functions of five h-BNC config- urations are examined as h-BN concentration ranged from 0 to 100%. We report that the band gap energy of h-BNC can be continuously and quadratically tuned as a function of h-BN concentration.
4 pages,5 figures, 1 table
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Cited by in corpus (6)
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- Influence of Interface Geometry on Phase Stability and Bandgap Engineering in Boron Nitride substituted Graphene: A Combined First-principles and Monte Carlo Study
- Electronic Structure, Phase Stability and Resistivity of Hybrid Hexagonal C(BN) Two-dimensional Nanomaterial: A First-principles Study
- Tunable electronic properties of partially edge-hydrogenated armchair boron-nitrogen-carbon nanoribbons
- Exploration of stable atomic configurations in graphene-like BCN systems by Bayesian optimization