Optical properties of graphene antidot lattices
arXiv:0806.0277 · doi:10.1103/PhysRevB.77.245431
Abstract
Undoped graphene is semi-metallic and thus not suitable for many electronic and optoelectronic applications requiring gapped semiconductor materials. However, a periodic array of holes (antidot lattice) renders graphene semiconducting with a controllable band gap. Using atomistic modelling, we demonstrate that this artificial nanomaterial is a dipole-allowed direct gap semiconductor with a very pronounced optical absorption edge. Hence, optical infrared spectroscopy should be an ideal probe of the electronic structure. To address realistic experimental situations, we include effects due to disorder and the presence of a substrate in the analysis.
arXiv comment11 pages, 9 figures, accepted for publication in Phys. Rev. B
References in corpus (14)
- Electric Field Effect in Atomically Thin Carbon Films
- Universal Dynamic Conductivity and Quantized Visible Opacity of Suspended Graphene
- Energy Band Gap Engineering of Graphene Nanoribbons
- Half-Metallic Graphene Nanoribbons
- Chaotic Dirac billiard in graphene quantum dots
- Making graphene visible
- Optical far-infrared properties of graphene monolayer and multilayers
- Space-time dispersion of graphene conductivity
- Graphene Antidot Lattices - Designed Defects and Spin Qubits
- Graphene Spin Valve Devices
- Visibility of graphene flakes on a dielectric substrate
- Colors Of Graphite On Silicon Dioxide
- Aharonov-Bohm effect in graphene
- Notes on the minimal longitudinal dc conductivity of perfect bilayer graphene
Cited by in corpus (32)
- Electronic properties of graphene antidot lattices
- Theory of second harmonic generation in few-layered MoS2
- Mobility of 2D materials from first principles in an accurate and automated framework
- Conductivity of suspended and non-suspended graphene at finite gate voltage
- Character of electronic states in graphene antidot lattices: Flat bands and spatial localization
- Symmetry-induced gap opening in graphene superlattices
- Inner and outer edge states in graphene rings: A numerical investigation
- DFT study of graphene antidot lattices: The roles of geometry relaxation and spin
- High-order harmonic generation from gapped graphene: perturbative response and transition to non-perturbative regime
- Electronic Properties of Disordered Graphene Antidot Lattices
- Electronic transport in disordered graphene antidot lattice devices
- Polaronic signatures and spectral properties of graphene antidot lattices
- Hofstadter butterflies and magnetically induced band gap quenching in graphene antidot lattices
- Tight-binding study of the magneto-optical properties of gapped graphene
- Electron-phonon coupling in graphene antidot lattices: an indication of polaronic behavior
- Tuning electronic structure of graphene via tailoring structure: theoretical study
- Electronic and optical properties of graphene antidot lattices: Comparison of Dirac and tight-binding models
- Transport in graphene antidot barriers and tunneling devices
- Confined Electrons in Effective Plane Fractals
- Screening in graphene antidot lattices
- Isolated and hybrid bilayer graphene rings
- Neutral magic-angle bilayer graphene: Condon instability and chiral resonances
- Unveiling the Miniband Structure of Graphene Moiré Superlattices via Gate-dependent Terahertz Photocurrent Spectroscopy
- Floquet Graphene Antidot Lattices
- Convergent Fabrication of a Nanoporous Two-Dimensional Carbon Network from an Aldol Condensation on Metal Surfaces
- Self-consistent model of edge doping in graphene
- Optical Conductivity Signatures of Floquet Electronic Phases
- Thermoelectric Properties of Electrostatically Tunable Antidot Lattices
- Engineering two-dimensional kagome topological insulator from porous graphene
- Conduction band population in graphene in ultrashort strong laser field: case of massive Dirac particles
- Effect of Hexagonal Boron Nitride on Energy Band Gap of Graphene Antidot Structures
- Crystallizing electrons with artificially patterned lattices