Transport in graphene antidot barriers and tunneling devices
arXiv:1211.4326 · doi:10.1063/1.4768844
Abstract
Periodic arrays of antidots, i.e. nanoscale perforations, in graphene enable tight confinement of carriers and efficient transport barriers. Such barriers evade the Klein tunneling mechanism by being of the mass rather than electrostatic type. While all graphene antidot lattices (GALs) may support directional barriers, we show, however, that a full transport gap exists only for certain orientations of the GAL. Moreover, we assess the applicability of gapped graphene and the Dirac continuum approach as simplified models of various antidot structures showing that, in particular, the former is an excellent approximation for transport in GALs supporting a bulk band gap. Finally, the transport properties of a GAL based resonant tunneling diode is analyzed indicating that such advanced graphene based devices may, indeed, be realized using GAL structures.
12 pages, 9 figures, accepted for publication on Journal of Applied Physics
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- Emergence of bound states in ballistic magnetotransport of graphene antidots
- Protected edge states in silicene antidots and dots in magnetic field
- Floquet Graphene Antidot Lattices
- Predicting edge-localized monovacancy defects in zigzag graphene nanoribbons from Floquet quasienergy spectrum