Spin Transport and Precession in Graphene measured by Nonlocal and Three-Terminal Methods
arXiv:1405.0836 · doi:10.1063/1.4876060
Abstract
We investigate the spin transport and precession in graphene by using the Hanle effect in nonlocal and threeterminal measurement geometries. Identical spin lifetimes, spin diffusion lengths and spin polarizations are observed in graphene devices for both techniques over a wide range of temperatures. The magnitude of the spin signals is well explained by spin transport models. These observations rules out any signal enhancements or additional scattering mechanisms at the interfaces for both geometries. This validates the applicability of both the measurement methods for graphene based spintronics devices and their reliable extractions of spin parameters.
5 pages, 4 figures
References in corpus (6)
- Intrinsic and Extrinsic Performance Limits of Graphene Devices on SiO2
- Electrical Detection of Spin Transport in Lateral Ferromagnet-Semiconductor Devices
- Contact induced spin relaxation in Hanle spin precession measurements
- Efficient Spin Injection into Silicon and the Role of the Schottky Barrier
- Annealing-induced magnetic moments detected by spin precession measurements in epitaxial graphene on SiC
- Thermal Creation of Electron Spin Polarization in n-Type Silicon
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- Large-scale BN tunnel barriers for graphene spintronics
- Spin diffusion in ultracold spin-orbit coupled K gas
- The shape of the Hanle curve in spin-transport structures in the presence of the ac drive
- Manifestation of two-channel nonlocal spin transport in the shapes of the Hanle curves