A two-channel model for Spin-relaxation noise
arXiv:1712.01414 · doi:10.1103/PhysRevB.96.235439
Abstract
We develop a two-channel resistor model for simulating spin transport with general applicability. Using this model, for the case of graphene as a prototypical material, we calculate the spin signal consistent with experimental values. Using the same model we also simulate the charge and spin- dependent 1/f noise, both in the local and nonlocal four-probe measurement schemes, and identify the noise from the spin-relaxation resistances as the major source of spin-dependent 1/f noise.
6 figures, 7 pages
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