Parallel Stitching of Two-Dimensional Materials

Abstract

Diverse parallel stitched two-dimensional heterostructures are synthesized, including metal-semiconductor (graphene-MoS2), semiconductor-semiconductor (WS2-MoS2), and insulator-semiconductor (hBN-MoS2), directly through selective sowing of aromatic molecules as the seeds in chemical vapor deposition (CVD) method. Our methodology enables the large-scale fabrication of lateral heterostructures with arbitrary patterns, and clean and precisely aligned interfaces, which offers tremendous potential for its application in integrated circuits.

30 pages, 4 figures, Accepted by Advanced Materials

References in corpus (4)

• Boron nitride substrates for high-quality graphene electronics
• Synthesis of Large-Area MoS2 Atomic Layers with Chemical Vapor Deposition
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Interference effect on Raman spectrum of graphene on SiO_2/Si

Cited by in corpus (18)

• Large-scale quantum-emitter arrays in atomically thin semiconductors
• Chemical assembly of atomically thin transistors and circuits in a large scale
• Atomically-thin Ohmic Edge Contacts Between Two-dimensional Materials
• Universal Scaling Laws in Schottky Heterostructures Based on Two-Dimensional Materials
• Immunity to Scaling in MoS2 Transistors Using Edge Contacts
• Tunable Doping of Rhenium and Vanadium into Transition Metal Dichalcogenides for Two-Dimensional Electronics
• Sub-Nanometer Channels Embedded in Two-Dimensional Materials
• One-dimensional edge contacts to a monolayer semiconductor
• Designing Artificial Two-Dimensional Landscapes via Room-Temperature Atomic-Layer Substitution
• Structure, preparation, and applications of 2D material-based metal-semiconductor heterostructures
• Strain Modulated Superlattices in Graphene
• High conduction hopping behavior induced in transition metal dichalcogenides by percolating defect networks: toward atomically thin circuits
• Lateral heterostructures and one-dimensional interfaces in 2D transition metal dichalcogenides
• Lateral Interfaces of Transition Metal Dichalcogenides: A Stable Tunable One-Dimensional Physics Platform
• High performance Tunnel Field Effect Transistors based on in-plane transition metal dichalcogenide heterojunctions
• Heat transport across graphene/hexagonal-BN tilted grain boundaries from phase-field crystal model and molecular dynamics simulations
• Atomically Resolved Observation of Continuous Interfaces between As-grown MoS2 Monolayer and WS2/MoS2 Heterobilayer on SiO2
• Phase field crystal model for heterostructures