Sub-Nanometer Channels Embedded in Two-Dimensional Materials

Abstract

Two-dimensional (2D) materials are among the most promising candidates for next-generation electronics due to their atomic thinness, allowing for flexible transparent electronics and ultimate length scaling. Thus far, atomically-thin p-n junctions, metal-semiconductor contacts, and metal-insulator barriers have been demonstrated. While 2D materials achieve the thinnest possible devices, precise nanoscale control over the lateral dimensions is also necessary. Here, we report the direct synthesis of sub-nanometer-wide 1D MoS2 channels embedded within WSe2 monolayers, using a dislocation-catalyzed approach. The 1D channels have edges free of misfit dislocations and dangling bonds, forming a coherent interface with the embedding 2D matrix. Periodic dislocation arrays produce 2D superlattices of coherent MoS2 1D channels in WSe2. Using molecular dynamics simulations, we have identified other combinations of 2D materials where 1D channels can also be formed. The electronic band structure of these 1D channels offer the promise of carrier confinement in a direct-gap material and charge separation needed to access the ultimate length scales necessary for future electronic applications.

22 pages main manuscript and methods, 4 main figures, 30 pages supplementary materials, 16 extended figures

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• Five Degree-of-Freedom Property Interpolation of Arbitrary Grain Boundaries via Voronoi Fundamental Zone Octonion Framework
• Stoichiometric Control and Optical Properties of BaTiO3 Thin Films Grown by Hybrid MBE
• Inlaid ReS2 Quantum Dots in Monolayer MoS2
• Spin current at a magnetic junction as a probe of the Kondo state
• Intrinsic edge excitons in two-dimensional MoS${}_2$
• A Ballistic Two-Dimensional Lateral Heterojunction Bipolar Transistor
• Structural and Electronic Properties of Defective AlN/GaN Hybrid Nanostrutures