92 citations · 185 across the 5 of their papers we have counts for
5 papers
Comparison of multiple-gate MOSFET architectures using Monte Carlo simulation
J. Saint-Martin, A. Bournel, P. Dollfus
Multiple-gate SOI MOSFETs with gate length equal to 25 nm are compared using device Monte Carlo simulation. In such architectures, the short channel effects may be controlled with…
Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
F. Monsef, P. Dollfus, S. Galdin-Retailleau +2
The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electr…
On the ballistic transport in nanometer-scaled double-gate MOSFET
J. Saint Martin, A. Bournel, P. Dollfus
The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of t…
Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation
P. Dollfus, A. Bournel, S. Galdin +2
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of elect…
Exact calculation of single-electron states in Si-nanocrystal embedded in SiO2
Nguyen Hong Quang, Tran The Trung, Johann See +1
We present an exact calculation of the single-electron energies and wave-functions for any bound state in a realistic Si-SiO2 spherical quantum dot, including the material dependen…