92 citations · 185 across the 6 of their papers we have counts for
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cond-mat.mes-hall2003★ 20 cited
Electron transport in Si/SiGe modulation-doped heterostructures using Monte Carlo simulation
F. Monsef, P. Dollfus, S. Galdin-Retailleau +2
The electron transport in the two-dimensional gas formed in tensile-strained Si1-xGex/Si/Si1-xGex heterostructures is investigated using Monte Carlo simulation. At first the electr…
cond-mat.mes-hall2003★ 92 cited
On the ballistic transport in nanometer-scaled double-gate MOSFET
J. Saint Martin, A. Bournel, P. Dollfus
The scattering effects are studied in nanometer-scaled double-gate MOSFET, using Monte Carlo simulation. The non-equilibrium transport in the channel is analyzed with the help of t…
cond-mat.mes-hall2003★ 68 cited
Effect of discrete impurities on electron transport in ultra-short MOSFET using 3D Monte Carlo simulation
P. Dollfus, A. Bournel, S. Galdin +2
This paper discusses the influence of the channel impurity distribution on the transport and the drive current in short-gate MOSFET. In this purpose, a careful description of elect…