197 citations · 728 across the 30 of their papers we have counts for
30 papers
Biaxial Strain Modulated Valence Band Engineering in III-V Digital Alloys
Sheikh Z. Ahmed, Yaohua Tan, Jiyuan Zheng +2
Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective…
Atomistic transport modeling, design principles and empirical rules for Low Noise III-V Digital Alloy Avalanche Photodiodes
Sheikh Z. Ahmed, Yaohua Tan, Jiyuan Zheng +2
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environmen…
Characterization of band offsets in AlInAsSb alloys with varying Al composition
Jiyuan Zheng, Andrew H. Jones, Yaohua Tan +7
The unprecedented wide bandgap tunability (~1 eV) of AlInAsSb latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near…
Full band Monte Carlo simulation of AlInAsSb digital alloys
Jiyuan Zheng, Sheikh Z. Ahmed, Yuan Yuan +7
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence…
A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes
Sheikh Z. Ahmed, Samiran Ganguly, Yuan Yuan +4
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate…
Computational search for ultrasmall and fast skyrmions in the Inverse Heusler family
Yunkun Xie, Jianhua Ma, Hamed Vakilitaleghani +2
Skyrmions are magnetic excitations that are potentially ultrasmall and topologically protected, making them interesting for high-density all-electronic ultrafast storage applicatio…
Machine learning electron correlation in a disordered medium
Jianhua Ma, Puhan Zhang, Yaohua Tan +2
Learning from data has led to a paradigm shift in computational materials science. In particular, it has been shown that neural networks can learn the potential energy surface and…
Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance
Sheikh Z. Ahmed, Yaohua Tan, Daniel S. Truesdell +2
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic…
A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors
Samiran Ganguly, Moonhyung Jang, Yaohua Tan +3
We present a physics based multiscale materials-to-systems model for polycrystalline photodetectors that connects fundamental material properties to circuit level performanc…
Anomalous heat flow in 8- borophene with tilted Dirac cones
Parijat Sengupta, Yaohua Tan, Enrico Bellotti +1
We analytically establish an anomalous transverse flow of heat in 8-\textit{Pmmn} borophene, one of the several two-dimensional (2D) allotropes of Boron (B). The dispersion of this…
Switching Mechanism and the Scalability of vertical-TFETs
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +2
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by…
Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors
Parijat Sengupta
We study the low temperature thermal conductivity of single-layer transition metal dichalcogenides. In the low temperature regime where heat is carried primarily through transport…
Spintronic signatures of Klein tunneling in topological insulators
Yunkun Xie, Yaohua Tan, Avik W. Ghosh
Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albe…
Graphene Klein tunnel transistors for high speed analog RF applications
Yaohua Tan, Mirza M. Elahi, Han-Yu Tsao +3
We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The…
Imparity in valley population for single layer transition metal dichalcogenides under elliptical polarization
Parijat Sengupta, Yaohua Tan, Dmitris Pavlidis +1
The illumination of a single-layer transition metal dichalcogenide with an elliptically-polarized light beam is shown to give rise to a differential rate of inter-band carrier exci…
Transport in vertically stacked hetero-structures from 2D materials
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +3
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is invest…
First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding
Yaohua Tan, Fan Chen, Avik Ghosh
We explore the band structure and ballistic electron transport in twisted bilayer using Density Functional Theory (DFT). The sphagetti like bands are unfolded to g…
Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally cha…
High-Performance Complementary III-V Tunnel FETs with Strain Engineering
Jun Z. Huang, Yu Wang, Pengyu Long +3
Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFE…
Transferable tight binding model for strained group IV and III-V materials and heterostructures
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +2
It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with neares…
Surface Passivation in Empirical Tight Binding
Yu He, Yaohua Tan, Zhengping Jiang +3
Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that expli…
In-surface confinement of topological insulator nanowire surface states
Fan W. Chen, Luis A. Jauregui, Yaohua Tan +4
The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assum…
Transferable tight binding model for strained group IV and III-V heterostructures
Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis +2
In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding p…
Tight binding analysis of Si and GaAs ultra thin bodies with subatomic resolution
Yaohua P. Tan, Michael Povolotsky, Tillmann Kubis +2
Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments o…