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20122021
most citedTunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

197 citations · 728 across the 30 of their papers we have counts for

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Showing 2017Show all

5 papers · 1 filter

cond-mat.mtrl-sci2017★ 45 cited

Switching Mechanism and the Scalability of vertical-TFETs

Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +2

In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by…

cond-mat.mtrl-sci2017★ 4 cited

Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors

Parijat Sengupta

We study the low temperature thermal conductivity of single-layer transition metal dichalcogenides. In the low temperature regime where heat is carried primarily through transport…

cond-mat.mes-hall2017★ 18 cited

Spintronic signatures of Klein tunneling in topological insulators

Yunkun Xie, Yaohua Tan, Avik W. Ghosh

Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albe…

physics.app-ph2017★ 1 cited

Graphene Klein tunnel transistors for high speed analog RF applications

Yaohua Tan, Mirza M. Elahi, Han-Yu Tsao +3

We propose Graphene Klein tunnel transistors (GKTFET) as a way to enforce current saturation while maintaining large mobility for high speed radio frequency (RF) applications. The…

cond-mat.mtrl-sci2017

Imparity in valley population for single layer transition metal dichalcogenides under elliptical polarization

Parijat Sengupta, Yaohua Tan, Dmitris Pavlidis +1

The illumination of a single-layer transition metal dichalcogenide with an elliptically-polarized light beam is shown to give rise to a differential rate of inter-band carrier exci…