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20122021
most citedTunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

197 citations · 728 across the 30 of their papers we have counts for

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Showing 2013Show all

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cond-mat.mes-hall2013★ 32 cited

Design principles for HgTe based topological insulator devices

Parijat Sengupta, Tillmann Kubis, Yaohua Tan +2

The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical…