197 citations · 728 across the 30 of their papers we have counts for
5 papers · 1 filter
Transport in vertically stacked hetero-structures from 2D materials
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +3
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is invest…
First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding
Yaohua Tan, Fan Chen, Avik Ghosh
We explore the band structure and ballistic electron transport in twisted bilayer using Density Functional Theory (DFT). The sphagetti like bands are unfolded to g…
Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally cha…
High-Performance Complementary III-V Tunnel FETs with Strain Engineering
Jun Z. Huang, Yu Wang, Pengyu Long +3
Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFE…
Transferable tight binding model for strained group IV and III-V materials and heterostructures
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +2
It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with neares…