A Physics Based Multiscale Compact Model of p-i-n Avalanche Photodiodes
arXiv:2102.04647 · doi:10.1109/JLT.2021.3068265
Abstract
III-V material based digital alloy Avalanche Photodiodes (APDs) have recently been found to exhibit low noise similar to Silicon APDs. The III-V materials can be chosen to operate at any wavelength in the infrared spectrum. In this work, we present a physics-based SPICE compatible compact model for APDs built from parameters extracted from an Environment-Dependent Tight Binding (EDTB) model calibrated to ab-initio Density Functional Theory (DFT) and Monte Carlo (MC) methods. Using this approach, we can accurately capture the physical characteristics of these APDs in integrated photonics circuit simulations.
arXiv comment8 pages, 11 figures
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