197 citations · 728 across the 30 of their papers we have counts for
16 papers · 1 filter
Biaxial Strain Modulated Valence Band Engineering in III-V Digital Alloys
Sheikh Z. Ahmed, Yaohua Tan, Jiyuan Zheng +2
Some III-V digital alloy avalanche photodiodes exhibit low excess noise. These alloys have low hole ionization coefficients due to presence of small 'minigaps', enhanced effective…
Characterization of band offsets in AlInAsSb alloys with varying Al composition
Jiyuan Zheng, Andrew H. Jones, Yaohua Tan +7
The unprecedented wide bandgap tunability (~1 eV) of AlInAsSb latticed-matched to GaSb enables the fabrication of photodetectors over a wide range from near…
Full band Monte Carlo simulation of AlInAsSb digital alloys
Jiyuan Zheng, Sheikh Z. Ahmed, Yuan Yuan +7
Avalanche photodiodes fabricated from AlInAsSb grown as a digital alloy exhibit low excess noise. In this paper, we investigate the band structure-related mechanisms that influence…
Modeling tunnel field effect transistors - from interface chemistry to non-idealities to circuit level performance
Sheikh Z. Ahmed, Yaohua Tan, Daniel S. Truesdell +2
We present a quasi-analytical model for Tunnel Field Effect Transistors (TFETs) that includes the microscopic physics and chemistry of interfaces and non-idealities. The ballistic…
Anomalous heat flow in 8- borophene with tilted Dirac cones
Parijat Sengupta, Yaohua Tan, Enrico Bellotti +1
We analytically establish an anomalous transverse flow of heat in 8-\textit{Pmmn} borophene, one of the several two-dimensional (2D) allotropes of Boron (B). The dispersion of this…
Switching Mechanism and the Scalability of vertical-TFETs
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +2
In this work, vertical tunnel field-effect transistors (v-TFETs) based on vertically stacked heretojunctions from 2D transition metal dichalcogenide (TMD) materials are studied by…
Low-temperature thermal transport and thermopower of monolayer transition metal dichalcogenide semiconductors
Parijat Sengupta
We study the low temperature thermal conductivity of single-layer transition metal dichalcogenides. In the low temperature regime where heat is carried primarily through transport…
Imparity in valley population for single layer transition metal dichalcogenides under elliptical polarization
Parijat Sengupta, Yaohua Tan, Dmitris Pavlidis +1
The illumination of a single-layer transition metal dichalcogenide with an elliptically-polarized light beam is shown to give rise to a differential rate of inter-band carrier exci…
Transport in vertically stacked hetero-structures from 2D materials
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +3
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is invest…
First principles study and empirical parametrization of twisted bilayer MoS2 based on band-unfolding
Yaohua Tan, Fan Chen, Avik Ghosh
We explore the band structure and ballistic electron transport in twisted bilayer using Density Functional Theory (DFT). The sphagetti like bands are unfolded to g…
Transferable tight binding model for strained group IV and III-V materials and heterostructures
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +2
It is critical to capture the effect due to strain and material interface for device level transistor modeling. We introduced a transferable sp3d5s* tight binding model with neares…
Surface Passivation in Empirical Tight Binding
Yu He, Yaohua Tan, Zhengping Jiang +3
Empirical Tight Binding (TB) methods are widely used in atomistic device simulations. Existing TB methods to passivate dangling bonds fall into two categories: 1) Method that expli…
In-surface confinement of topological insulator nanowire surface states
Fan W. Chen, Luis A. Jauregui, Yaohua Tan +4
The bandstructures of [110] and [001] Bi2Te3 nanowires are solved with the atomistic 20 band tight binding functionality of NEMO5. The theoretical results reveal: The popular assum…
Transferable tight binding model for strained group IV and III-V heterostructures
Yaohua P. Tan, Michael Povolotskyi, Tillmann Kubis +2
In this work, transferable empirical tight binding parameters of strained group IV and III-V semiconductors are generated from ab-initio calculations. The empirical tight binding p…
Tight binding analysis of Si and GaAs ultra thin bodies with subatomic resolution
Yaohua P. Tan, Michael Povolotsky, Tillmann Kubis +2
Empirical tight binding(ETB) methods are widely used in atomistic device simulations. Traditional ways of generating the ETB parameters rely on direct fitting to bulk experiments o…
Empirical tight binding parameters for GaAs and MgO with explicit basis through DFT mapping
Yaohua Tan, Michael Povolotskyi, Tillmann Kubis +4
The Empirical Tight Binding(ETB) method is widely used in atomistic device simulations. The reliability of such simulations depends very strongly on the choice of basis sets and th…