18 citations · 29 across the 9 of their papers we have counts for
6 papers · 1 filter
Atomistic transport modeling, design principles and empirical rules for Low Noise III-V Digital Alloy Avalanche Photodiodes
Sheikh Z. Ahmed, Yaohua Tan, Jiyuan Zheng +2
A series of III-V ternary and quarternary digital alloy avalanche photodiodes (APDs) have recently been seen to exhibit very low excess noise. Using band inversion of an environmen…
Computational search for ultrasmall and fast skyrmions in the Inverse Heusler family
Yunkun Xie, Jianhua Ma, Hamed Vakilitaleghani +2
Skyrmions are magnetic excitations that are potentially ultrasmall and topologically protected, making them interesting for high-density all-electronic ultrafast storage applicatio…
A Multiscale Materials-to-Systems Modeling of Polycrystalline Pb-Salt Photodetectors
Samiran Ganguly, Moonhyung Jang, Yaohua Tan +3
We present a physics based multiscale materials-to-systems model for polycrystalline photodetectors that connects fundamental material properties to circuit level performanc…
Spintronic signatures of Klein tunneling in topological insulators
Yunkun Xie, Yaohua Tan, Avik W. Ghosh
Klein tunneling, the perfect transmission of normally incident Dirac electrons across a potential barrier, has been widely studied in graphene and explored to design switches, albe…
Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally cha…
High-Performance Complementary III-V Tunnel FETs with Strain Engineering
Jun Z. Huang, Yu Wang, Pengyu Long +3
Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFE…