A microprocessor based on a two-dimensional semiconductor

Abstract

The advent of microcomputers in the 1970s has dramatically changed our society. Since then, microprocessors have been made almost exclusively from silicon, but the ever-increasing demand for higher integration density and speed, lower power consumption and better integrability with everyday goods has prompted the search for alternatives. Germanium and III-V compound semiconductors are being considered promising candidates for future high-performance processor generations and chips based on thin-film plastic technology or carbon nanotubes could allow for embedding electronic intelligence into arbitrary objects for the Internet-of-Things. Here, we present a 1-bit implementation of a microprocessor using a two-dimensional semiconductor - molybdenum disulfide. The device can execute user-defined programs stored in an external memory, perform logical operations and communicate with its periphery. Importantly, our 1-bit design is readily scalable to multi-bit data. The device consists of 115 transistors and constitutes the most complex circuitry so far made from a two-dimensional material.

20 pages, 9 figures

References in corpus (6)

• Atomically thin MoS2: A new direct-gap semiconductor
• Black phosphorus field-effect transistors
• Growth of Large-Area and Highly Crystalline MoS2 Thin Layers on Insulating Substrates
• Integrated Circuits Based on Bilayer MoS2 Transistors
• Channel Length Scaling of MoS2 MOSFETs
• Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials

Cited by in corpus (20)

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• Gas dependent hysteresis in MoS${}_2$ field effect transistors
• Large-Scale Integrated Vector-Matrix Multiplication Processor Based on Monolayer MoS2
• Time- and momentum-resolved photoemission studies using time-of-flight momentum microscopy at a free-electron laser
• Tuning Conductivity Type in Monolayer WS2 and MoS2 by Sulfur Vacancies
• Theory of Strain-Induced Confinement in Transition Metal Dichalcogenide Monolayers
• Zero Bias Power Detector Circuits based on MoS${}_2$ Field Effect Transistors on Wafer-Scale Flexible Substrates
• Growth and applications of two-dimensional single crystals
• Thermo-optic refraction in MoS2 medium for 'Normally On' all Optical switch
• Radiation-hardened and Repairable MoS${}_2$ Field Effect Devices with Polymer Solid Electrolyte Gates
• Blocking transition of interface traps in MoS${}_2$-on-SiO${}_2$ FETs
• Stability of edge magnetism against disorder in zigzag MoS${}_2$ nanoribbons
• Unraveling the interlayer and intralayer coupling in two-dimensional layered MoS${}_2$ by X-ray absorption spectroscopy and ab initio molecular dynamics simulations
• Realization of graphene logics in an exciton-enhanced insulating phase
• Large-Scale Fabrication of RF MOSFETs on Liquid-Exfoliated MoS2
• Real-time image processing with a 2D semiconductor neural network vision sensor
• Circuit-aware Device Modeling of Energy-efficient Monolayer WS${}_2$ Trench-FinFETs
• Time-tagging data acquisition system for testing superconducting electronics based on an RFSoC and custom analog frontend