Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors

Abstract

Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numerical cost but good MS basis is usually very hard to obtain for atomistic full-band models. In this work, a robust and parallel algorithm is developed to optimize the MS basis for atomistic nanowires. This enables tight binding non-equilibrium Green's function (NEGF) simulation of nanowire MOSFET with realistic cross section of $10nm\times 10nm$ using a small computer cluster. This approach is applied to compare the performance of InGaAs and Si nanowire nMOSFETs with various channel lengths and cross sections. Simulation results with full-band accuracy indicate that InGaAs nanowire nMOSFETs have no drive current advantage over their Si counterparts for cross sections up to about $10nm\times 10nm$.

arXiv comment8 pages (double column), 13 figures, 1 table

References in corpus (5)

• A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
• Bandstructure Effects in Silicon Nanowire Electron Transport
• Transferable tight binding model for strained group IV and III-V materials and heterostructures
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Cited by in corpus (3)

• Impact of body thickness and scattering on III-V triple heterojunction Fin-TFET modeled with atomistic mode space approximation
• Mode-space-compatible inelastic scattering in atomistic nonequilibrium Green's function implementations
• A variational quantum eigensolver tailored to multi-band tight-binding simulations of electronic structures