96 citations · 520 across the 27 of their papers we have counts for
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Robust Mode Space Approach for Atomistic Modeling of Realistically Large Nanowire Transistors
Jun Z. Huang, Hesameddin Ilatikhameneh, Michael Povolotskyi +1
Atomistic quantum transport simulation of realistically large devices is computationally very demanding. The widely used mode space (MS) approach can significantly reduce the numer…
Optimization of edge state velocity in the integer quantum Hall regime
Harshad Sahasrabudhe, Bozidar Novakovic, James Nakamura +5
Observation of interference in the quantum Hall regime may be hampered by a small edge state velocity due to finite phase coherence time. Therefore designing two quantum point cont…
Control of interlayer delocalization in 2H transition metal dichalcogenides
Kuang-Chung Wang, Teodor K. Stanev, Daniel Valencia +14
It is assessed in detail both experimentally and theoretically how the interlayer coupling of transition metal dichalcogenides controls the electronic properties of the respective…
Combination of equilibrium and non-equilibrium carrier statistics into an atomistic quantum transport model for tunneling hetero-junctions
Tarek A. Ameen, Hesameddin Ilatikhameneh, Jun Z. Huang +3
Tunneling hetero-junctions (THJs) usually induce confined states at the regions close to the tunnel junction which significantly affect their transport properties. Accurate numeric…
A Multiscale Modeling of Triple-Heterojunction Tunneling FETs
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +5
A high performance triple-heterojunction (3HJ) design has been previously proposed for tunneling FETs (TFETs). Compared with single heterojunction (HJ) TFETs, the 3HJ TFETs have bo…
Performance degradation of superlattice MOSFETs due to scattering in the contacts
Pengyu Long, Jun Huang, Zhengping Jiang +3
Ideal, completely coherent quantum transport calculations had predicted that superlattice MOSFETs may offer steep subthreshold swing performance below 60mV/dec to around 39mV/dec.…
Scalable GaSb/InAs tunnel FETs with non-uniform body thickness
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +2
GaSb/InAs heterojunction tunnel field-effect transistors are strong candidates in building future low-power integrated circuits, as they could provide both steep subthreshold swing…
P-Type Tunnel FETs With Triple Heterojunctions
Jun Z. Huang, Pengyu Long, Michael Povolotskyi +2
A triple-heterojunction (3HJ) design is employed to improve p-type InAs/GaSb heterojunction (HJ) tunnel FETs. The added two HJs (AlInAsSb/InAs in the source and GaSb/AlSb in the ch…
High-Performance Complementary III-V Tunnel FETs with Strain Engineering
Jun Z. Huang, Yu Wang, Pengyu Long +3
Strain engineering has recently been explored to improve tunnel field-effect transistors (TFETs). Here, we report design and performance of strained ultra-thin-body (UTB) III-V TFE…
Quantum Transport Simulation of III-V TFETs with Reduced-Order K.P Method
Jun Z. Huang, Lining Zhang, Pengyu Long +2
III-V tunneling field-effect transistors (TFETs) offer great potentials in future low-power electronics application due to their steep subthreshold slope and large "on" current. Th…
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
Tarek Ameen, Hesameddin Ilatikhameneh, Yuling Hsueh +10
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated elect…
Anisotropic strain in SmSe and SmTe: implications for electronic transport
Marcelo A. Kuroda, Zhengping Jiang, Michael Povolotskyi +3
Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress indu…
Brillouin zone unfolding method for effective phonon spectra
Timothy B. Boykin, Arvind Ajoy, Hesameddin Ilatikhameneh +2
Thermal properties are of great interest in modern electronic devices and nanostructures. Calculating these properties is straightforward when the device is made from a pure materi…
Efficient and realistic device modeling from atomic detail to the nanoscale
J. E. Fonseca, T. Kubis, M. Povolotskyi +8
As semiconductor devices scale to new dimensions, the materials and designs become more dependent on atomic details. NEMO5 is a nanoelectronics modeling package designed for compre…
Engineering Nanowire n-MOSFETs at Lg < 8 nm
Saumitra Mehrotra, SungGeun Kim, Tillmann Kubis +3
As metal-oxide-semiconductor field-effect transistors (MOSFET) channel lengths (Lg) are scaled to lengths shorter than Lg<8 nm source-drain tunneling starts to become a major perfo…
Design principles for HgTe based topological insulator devices
Parijat Sengupta, Tillmann Kubis, Yaohua Tan +2
The topological insulator properties of CdTe/HgTe/CdTe quantum wells are theoretically studied. The CdTe/HgTe/CdTe quantum well behaves as a topological insulator beyond a critical…