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Impact of Dimensionality on PN Junctions
Hesameddin Ilatikhameneh, Tarek Ameen, Fan Chen +3
Low dimensional material systems provide a unique set of properties useful for solid-state devices. The building block of these devices is the PN junction. In this work, we present…
Transport in vertically stacked hetero-structures from 2D materials
Fan Chen, Hesameddin Ilatikhameneh, Yaohua Tan +3
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is invest…
Thickness Engineered Tunnel Field-Effect Transistors based on Phosphorene
Fan W. Chen, Hesameddin Ilatikhameneh, Tarek A. Ameen +2
Thickness engineered tunneling field-effect transistors (TE-TFET) as a high performance ultra-scaled steep transistor is proposed. This device exploits a specific property of 2D ma…
Saving Moore's Law Down To 1nm Channels With Anisotropic Effective Mass
Hesameddin Ilatikhameneh, Tarek Ameen, Bozidar Novakovic +3
Scaling transistors' dimensions has been the thrust for the semiconductor industry in the last 4 decades. However, scaling channel lengths beyond 10 nm has become exceptionally cha…
Design Rules for High Performance Tunnel Transistors from 2D Materials
Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller +1
Tunneling field-effect transistors (TFETs) based on 2D materials are promising steep sub-threshold swing (SS) devices due to their tight gate control. There are two major methods t…