197 citations · 1.3k across the 30 of their papers we have counts for
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Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors
Tarek A. Ameen, Hesameddin Ilatikhameneh, Gerhard Klimeck +1
2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excell…
Can Tunnel Transistors Scale Below 10nm?
Hesameddin Ilatikhameneh, Gerhard Klimeck, Rajib Rahman
The main promise of tunnel FETs (TFETs) is to enable supply voltage () scaling in conjunction with dimension scaling of transistors to reduce power consumption. However, re…
From Fowler-Nordheim to Non-Equilibrium Green's Function Modeling of Tunneling
Hesameddin Ilatikhameneh, Ramon B. Salazar, Gerhard Klimeck +2
In this work, an analytic model is proposed which provides in a continuous manner the current-voltage characteristic (I-V) of high performance tunneling field-effect transistors (T…
Universal Behavior of Strain in Quantum Dots
Hesameddin Ilatikhameneh, Tarek Ameen, Gerhard Klimeck +1
Self-assembled quantum dots (QDs) are highly strained heterostructures. the lattice strain significantly modifies the electronic and optical properties of these devices. A universa…
Configurable Electrostatically Doped High Performance Bilayer Graphene Tunnel FET
Fan W. Chen, Hesameddin Ilatikhameneh, Gerhard Klimeck +2
A bilayer graphene based electrostatically doped tunnel field-effect transistor (BED-TFET) is proposed in this work. Unlike graphene nanoribbon TFETs in which the edge states deter…
Dielectric Engineered Tunnel Field-Effect Transistor
Hesameddin Ilatikhameneh, Tarek A. Ameen, Gerhard Klimeck +2
The dielectric engineered tunnel field-effect transistor (DE-TFET) as a high performance steep transistor is proposed. In this device, a combination of high-k and low-k dielectrics…
A Predictive Analytic Model for High-Performance Tunneling-Field Effect Transistors Approaching Non-Equilibrium Green's Function Simulations
Ramon B. Salazar, Hesameddin Ilatikhameneh, Rajib Rahman +2
A new compact modeling approach is presented which describes the full current-voltage (I-V) characteristic of high-performance (aggressively scaled-down) tunneling field-effect-tra…
Scaling Theory of Electrically Doped 2D Transistors
Hesameddin Ilatikhameneh, Gerhard Klimeck, Joerg Appenzeller +1
In this letter, it is shown that the existing scaling theories for chemically doped transistors cannot be applied to the novel class of electrically doped 2D transistors and the co…
Theoretical study of strain-dependent optical absorption in Stranski-Krastanov grown InAs/InGaAs/GaAs/AlGaAs quantum dots
Tarek Ameen, Hesameddin Ilatikhameneh, Yuling Hsueh +10
A detailed theoretical study of the optical absorption in self-assembled quantum dots is presented in this paper. A rigorous atomistic strain model as well as a sophisticated elect…
Optimum High-k Oxide for the Best Performance of Ultra-scaled Double-Gate MOSFETs
Mehdi Salmani-Jelodar, Hesameddin Ilatikhameneh, SungGeun Kim +2
A widely used technique to mitigate the gate leakage in the ultra-scaled metal oxide semiconductor field effect transistors (MOSFETs) is the use of high-k dielectrics, which provid…
Tunnel Field-Effect Transistors in 2D Transition Metal Dichalcogenide Materials
Hesameddin Ilatikhameneh, Yaohua Tan, Bozidar Novakovic +3
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quant…