activity
20092014
most citedLarge area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide

472 citations · 1.1k across the 12 of their papers we have counts for

collaborators

12 papers

cond-mat.mtrl-sci2014★ 20 cited

Film structure of epitaxial graphene oxide on SiC: Insight on the relationship between interlayer spacing, water content, and intralayer structure

S. Zhou, S. Kim, E. Di Gennaro +9

Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manage…

cond-mat.mes-hall2014★ 17 cited

Controlled epitaxial graphene growth within amorphous carbon corrals

James Palmer, Jan Kunc, Yike Hu +4

Structured growth of high quality graphene is necessary for technological development of carbon based electronics. Specifically, control of the bunching and placement of surface st…

cond-mat.mtrl-sci2013★ 14 cited

Wafer bonding solution to epitaxial graphene - silicon integration

Rui Dong, Zelei Guo, James Palmer +7

The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…

cond-mat.mtrl-sci2013★ 29 cited

A method to extract pure Raman spectrum of epitaxial graphene on SiC

Jan Kunc, Yike Hu, James Palmer +2

A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity…

cond-mat.mtrl-sci2013★ 155 cited

Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9

The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…

cond-mat.mes-hall2012★ 42 cited

Structured epitaxial graphene: growth and properties

Yike Hu, Ming Ruan, Zelei Guo +5

Graphene is generally considered to be a strong candidate to succeed silicon as an electronic material. However, to date, it actually has not yet demonstrated capabilities that exc…