472 citations · 1.1k across the 12 of their papers we have counts for
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Film structure of epitaxial graphene oxide on SiC: Insight on the relationship between interlayer spacing, water content, and intralayer structure
S. Zhou, S. Kim, E. Di Gennaro +9
Chemical oxidation of multilayer graphene grown on silicon carbide yields films exhibiting reproducible characteristics, lateral uniformity, smoothness over large areas, and manage…
Wafer bonding solution to epitaxial graphene - silicon integration
Rui Dong, Zelei Guo, James Palmer +7
The development of graphene electronics requires the integration of graphene devices with Si-CMOS technology. Most strategies involve the transfer of graphene sheets onto silicon,…
A method to extract pure Raman spectrum of epitaxial graphene on SiC
Jan Kunc, Yike Hu, James Palmer +2
A method is proposed to extract pure Raman spectrum of epitaxial graphene on SiC by using a Non-negative Matrix Factorization. It overcomes problems of negative spectral intensity…
Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors
Zelei Guo, Rui Dong, Partha Sarathi Chakraborty +9
The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene…
Large area and structured epitaxial graphene produced by confinement controlled sublimation of silicon carbide
Walt. A. de Heer, Claire Berger, Ming Ruan +6
After the pioneering investigations into graphene-based electronics at Georgia Tech (GT), great strides have been made developing epitaxial graphene on silicon carbide (EG) as a ne…
Top and side gated epitaxial graphene field effect transistors
Xuebin Li, Xiaosong Wu, Mike Sprinkle +5
Three types of first generation epitaxial graphene field effect transistors (FET) are presented and their relative merits are discussed. Graphene is epitaxially grown on both the c…