Giant Current-Perpendicular-to-Plane Magnetoresistance in Multilayer Graphene as Grown on Nickel
arXiv:1405.5253 · doi:10.1021/nl4030853
Abstract
Strong magnetoresistance effects are often observed in ferromagnet-nonmagnet multilayers, which are exploited in state-of-the-art magnetic field sensing and data storage technologies. In this work we report a novel current-perpendicular-to-plane magnetoresistance effect in multilayer graphene as grown on a catalytic nickel surface by chemical vapor deposition. A negative magnetoresistance effect of 10^4% has been observed, which persists even at room temperature. This effect is correlated with the shape of the 2D peak as well as with the occurrence of D peak in the Raman spectrum of the as-grown multilayer graphene. The observed magnetoresistance is extremely high as compared to other known materials systems for similar temperature and field range and can be qualitatively explained within the framework of "interlayer magnetoresistance" (ILMR).
Main text + Supporting information
References in corpus (14)
- The electronic properties of graphene
- The Raman Fingerprint of Graphene
- Room-Temperature Quantum Hall Effect in Graphene
- Making graphene visible
- Control and Characterization of Individual Grains and Grain Boundaries in Graphene Grown by Chemical Vapor Deposition
- Single Layer Behavior and Its Breakdown in Twisted Graphene Layers
- Multicomponent fractional quantum Hall effect in graphene
- Graphite and graphene as perfect spin filters
- Weak antilocalization in epitaxial graphene: evidence for chiral electrons
- Few layer graphene on SiC, pyrolitic graphite and graphene: a Raman scattering study
- Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition
- Effects of the Zero-Mode Landau Level on Inter-Layer Magnetoresistance in Multilayer Massless Dirac Fermion Systems
- Magneto-transport through graphene nano-ribbons
- Spin and Valley Splittings in Multilayered Massless Dirac Fermion System