Dephasing time in graphene due to interaction with flexural phonons
arXiv:1505.04834 · doi:10.1103/PhysRevLett.113.076601
Abstract
We investigate decoherence of an electron in graphene caused by electron-flexural phonon interaction. We find out that flexural phonons can produce dephasing rate comparable to the electron-electron one. The problem appears to be quite special because there is a large interval of temperature where the dephasing induced by phonons can not be obtain using the golden rule. We evaluate this rate for a wide range of density () and temperature () and determine several asymptotic regions with temperature dependence crossing over from to when temperature increases. We also find to be a non-monotonous function of . These distinctive features of the new contribution can provide an effective way to identify flexural phonons in graphene through the electronic transport by measuring the weak localization corrections in magnetoresistance.
arXiv comment13 pages, 8 figures
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