Hot electron transport in suspended multilayer graphene
arXiv:1007.1755 · doi:10.1103/PhysRevB.82.045411
Abstract
We study hot electron transport in short-channel suspended multilayer graphene devices created by a distinct experimental approach. For devices with semi-transparent contact barriers, a dip of differential conductance (dI/dV) has been observed at source drain bias Vd = 0, along with anomalies at higher Vd likely induced by optical phonon scattering. For devices with low contact barriers, only the dI/dV dip at Vd = 0 is observed, and we find a well-fit logarithmic dependence of dI/dV on both the bias Vd and the temperature T. The logarithmic Vd dependence is explained with the hot electron effect and the logarithmic T dependence could be attributed to the weak-localization in two-dimensions.
References in corpus (13)
- Electric Field Effect in Atomically Thin Carbon Films
- The electronic properties of graphene
- Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
- Suspended Graphene: a bridge to the Dirac point
- Unconventional quantum Hall effect and Berry's phase of 2pi in bilayer graphene
- Charged Impurity Scattering in Graphene
- Temperature dependent transport in suspended graphene
- Weak localisation magnetoresistance and valley symmetry in graphene
- Strong suppression of weak (anti)localization in graphene
- Weak localisation in graphene flakes
- Intervalley scattering, long-range disorder, and effective time reversal symmetry breaking in graphene
- Weak antilocalization in epitaxial graphene: evidence for chiral electrons
- Influence of trigonal warping on interference effects in bilayer graphene
Cited by in corpus (8)
- Temperature Dependence of Electric Transport in Few-layer Graphene under Large Charge Doping Induced by Electrochemical Gating
- Electronic Properties of Clean Au-Graphene Contacts
- AB-Stacked Multilayer Graphene Synthesized via Chemical Vapor Deposition: A Characterization by Hot Carrier Transport
- Signature of multilayer graphene strain-controlled domain walls in quantum Hall effect
- Depletion of carriers and negative differential conductivity in an intrinsic graphene under a dc electric field
- Simulation of temperature profile for the electron- and the lattice-systems in laterally structured layered conductors
- Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation
- Room temperature differential-conductance staircase in suspended graphitic quantum point contacts