Tunable magnetoresistance behavior in suspended graphitic multilayers through ion implantation
arXiv:1104.3635 · doi:10.1103/PhysRevB.83.235410
Abstract
We report a tunable magnetoresistance (MR) behavior in suspended graphitic multilayers through point defect engineering by ion implantation. We find that ion implantation drastically changes the MR behavior: the linear positive MR in pure graphitic multilayers transforms into a negative MR after introducing significant short-range disorders (implanted boron or carbon atoms), consistent with recent non-Markovian transport theory. Our experiments suggest the important role of the non-Markovian process in the intriguing MR behavior for graphitic systems, and open a new window for understanding transport phenomena beyond the Drude-Boltzmann approach and tailoring the electronic properties of graphitic layers.
21 pages, 8 figures (including supplementary materials); http://link.aps.org/doi/10.1103/PhysRevB.83.235410
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