Weak Localization and Antilocalization in Twisted Bilayer Graphene
arXiv:2303.16436 · doi:10.1103/PhysRevB.107.224205
Abstract
In this study, we investigate the weak localization (WL) and weak antilocalization (WAL) effects in twisted bilayer graphene positioned on a hexagonal boron nitride substrate. The bottom graphene layer aligns with the hexagonal boron nitride. The top layer of the system features a Dirac cone with a negligible gap, while the bottom layer possesses a relatively large band gap. With a low concentration of impurities, the quantum correction to conductivity stems from the quantum interference between two time-reversed impurity scattering trajectories. We discover that inter-layer scattering significantly contributes to the conductivity correction when the Fermi surface areas of the two valleys at low energy are comparable. A double crossover from WL to WAL andback to WL occurs at a specific range of Fermi energy, which is particularly intriguing.
arXiv comment11 pages,4 figures
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