222 citations · 1k across the 24 of their papers we have counts for
25 papers
Path distributions for describing eigenstates of orbital angular momentum
Randall M. Feenstra
The manner in which probability amplitudes of paths sum up to form wave functions of orbital angular momentum eigenstates is described. Using a generalization of stationary-phase a…
Path distributions for describing eigenstates of the harmonic oscillator and other 1-dimensional problems
Randall M. Feenstra
The manner in which probability amplitudes of paths sum up to form wave functions of a harmonic oscillator, as well as other, simple 1-dimensional problems, is described. Using kno…
Acquisition and Analysis of Scanning Tunneling Spectroscopy Data WSe Monolayer
Randall M. Feenstra, Grayson R. Frazier, Yi Pan +5
Acquisition and analysis is described for scanning tunneling spectroscopy data acquired from a monolayer of WSe grown on epitaxial graphene on SiC. Curve fitting of the data is…
An unexplored MBE growth mode reveals new properties of superconducting NbN
John Wright, Celesta Chang, Dacen Waters +8
Accessing unexplored conditions in crystal growth often reveals remarkable surprises and new regimes of physical behavior. In this work, performing molecular beam epitaxy of the te…
Photo-physics and electronic structure of lateral graphene/MoS2 and metal/MoS2 junctions
Shruti Subramanian, Quinn T. Campbell, Simon Moser +18
Integration of semiconducting transition metal dichalcogenides (TMDs) into functional optoelectronic circuitries requires an understanding of the charge transfer across the interfa…
Flatbands and Mechanical Deformation Effects in the Moiré Superlattice of MoS-WSe Heterobilayers
Dacen Waters, Yifan Nie, Felix Lüpke +11
It has recently been shown that quantum-confined states can appear in epitaxially grown van der Waals material heterobilayers without a rotational misalignment (), assoc…
Formation of Graphene atop a Si adlayer on the C-face of SiC
Jun Li, Qingxiao Wang, Guowei He +6
The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…
Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe
Felix Lüpke, Dacen Waters, Sergio C. de la Barrera +5
The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe and is characterized by a band gap in the two-dimension…
Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
Patrick C. Mende, Jun Li, Randall M. Feenstra
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer…
Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers
Yi Pan, Stefan Fölsch, Yifan Nie +7
A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatur…
Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices
Randall M. Feenstra, Sergio C. de la Barrera, Jun Li +2
Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G)…
Characteristics of Interlayer Tunneling Field Effect Transistors Computed by a "DFT-Bardeen" Method
Jun Li, Yifan Nie, Kyeongjae Cho +1
Theoretical predictions are made for the current-voltage characteristics of two-dimensional heterojunction interlayer tunneling field-effect transistors (Thin-TFETs), focusing on t…
Epitaxial graphene homogeneity and quantum Hall effect in millimeter-scale devices
Yanfei Yang, Guangjun Cheng, Patrick Mende +8
Quantized magnetotransport is observed in 5.6 x 5.6 mm^2 epitaxial graphene devices, grown using highly constrained sublimation on the Si-face of SiC(0001) at high temperature (190…
Thickness characterization of atomically-thin WSe on epitaxial graphene by low-energy electron reflectivity oscillations
Sergio C. de la Barrera, Yu-Chuan Lin, Sarah M. Eichfeld +4
In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe on epitaxial graphene on SiC. The emergence of u…
Topographic and electronic structure of cleaved SrTiO3(001) surfaces
Wattaka Sitaputra, Marek Skowronski, Randall M. Feenstra
The topographic and electronic structure of cleaved SrTiO3(001) surfaces were studied, employing samples that either had or had not been coated with Ti on their outer surfaces prio…
Formation of hexagonal Boron Nitride on Graphene-covered Copper Surfaces
Devashish P. Gopalan, Patrick C. Mende, Sergio C. de la Barrera +10
Graphene-covered copper surfaces have been exposed to borazine, (BH)3(NH)3, with the resulting surfaces characterized by low-energy electron microscopy. Although the intent of the…
Theory of resonant tunneling in bilayer-graphene/hexagonal-boron-nitride heterostructures
Sergio C. de la Barrera, Randall M. Feenstra
A theory is developed for calculating vertical tunneling current between two sheets of bilayer graphene separated by a thin, insulating layer of hexagonal boron nitride, neglecting…
Oxygen Vacancies on SrO-terminated SrTiO3(001) Surfaces studied by Scanning Tunneling Spectroscopy
Wattaka Sitaputra, Nikhil Sivadas, Marek Skowronski +2
The electronic structure of SrTiO3(001) surfaces was studied using scanning tunneling spectroscopy and density-functional theory. With high dynamic range measurements, an in-gap tr…
Molecular beam epitaxial growth of MoSe2 on graphite, CaF2 and graphene
Suresh Vishwanath, Xinyu Liu, Sergei Rouvimov +8
We report the structural and optical properties of molecular beam epitaxy (MBE) grown 2-dimensional (2D) material molybdenum diselenide (MoSe2) on graphite, CaF2 and epitaxial grap…
Probing critical point energies of transition metal dichalcogenides: surprising indirect gap of single layer
Chendong Zhang, Yuxuan Chen, Amber Johnson +5
Understanding quasiparticle band structures of transition metal dichalcogenides (TMDs) is critical for technological advances of these materials for atomic layer electronics and ph…
SymFET: A Proposed Symmetric Graphene Tunneling Field Effect Transistor
Pei Zhao, Randall M. Feenstra, Gong Gu +1
In this work, an analytical model to calculate the channel potential and current-voltage characteristics in a Symmetric tunneling Field-Effect-Transistor (SymFET) is presented. The…
Low-energy Electron Reflectivity from Graphene: First-Principles Computations and Approximate Models
R. M. Feenstra, M. Widom
A computational method is developed whereby the reflectivity of low-energy electrons from a surface can be obtained from a first-principles solution of the electronic structure of…
Low-energy Electron Reflectivity from Graphene
R. M. Feenstra, N. Srivastava, Qin Gao +6
Low-energy reflectivity of electrons from single- and multi-layer graphene is examined both theoretically and experimentally. A series of minima in the reflectivity over the energy…
Graphene formed on SiC under various environments: Comparison of Si-face and C-face
N. Srivastava, Guowei He, Luxmi +3
The morphology of graphene on SiC {0001} surfaces formed in various environments including ultra-high vacuum, 1 atm of argon, and 10^-6 to 10^-4 Torr of disilane is studied by atom…