activity
20122023
most citedLow-energy Electron Reflectivity from Graphene

106 citations · 274 across the 8 of their papers we have counts for

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10 papers · 1 filter

cond-mat.mes-hall2020

Acquisition and Analysis of Scanning Tunneling Spectroscopy Data WSe Monolayer

Randall M. Feenstra, Grayson R. Frazier, Yi Pan +5

Acquisition and analysis is described for scanning tunneling spectroscopy data acquired from a monolayer of WSe grown on epitaxial graphene on SiC. Curve fitting of the data is…

cond-mat.mes-hall2019

Formation of Graphene atop a Si adlayer on the C-face of SiC

Jun Li, Qingxiao Wang, Guowei He +6

The structure of the SiC(000-1) surface, the C-face of the {0001} SiC surfaces, is studied as a function of temperature and of pressure in a gaseous environment of disilane (Si2H6)…

cond-mat.mes-hall2019

Proximity-induced superconducting gap in the quantum spin Hall edge state of monolayer WTe

Felix Lüpke, Dacen Waters, Sergio C. de la Barrera +5

The quantum spin Hall (QSH) state was recently demonstrated in monolayers of the transition metal dichalcogenide 1T'-WTe and is characterized by a band gap in the two-dimension…

cond-mat.mes-hall2018

Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene

Patrick C. Mende, Jun Li, Randall M. Feenstra

Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer…

cond-mat.mes-hall2018

Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers

Yi Pan, Stefan Fölsch, Yifan Nie +7

A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatur…

cond-mat.mes-hall2018

Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices

Randall M. Feenstra, Sergio C. de la Barrera, Jun Li +2

Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G)…