222 citations · 1k across the 24 of their papers we have counts for
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Substitutional mechanism for growth of hexagonal boron nitride on epitaxial graphene
Patrick C. Mende, Jun Li, Randall M. Feenstra
Monolayer-thick hexagonal boron nitride (h-BN) is grown on graphene on SiC(0001), by exposure of the graphene to borazine, (BH)3(NH)3, at 1100 C. The h-BN films form ~2-micrometer…
Quantum-Confined Electronic States arising from Moiré Pattern of MoS2-WSe2 Hetero-bilayers
Yi Pan, Stefan Fölsch, Yifan Nie +7
A two-dimensional (2D) hetero-bilayer system consisting of MoS2 on WSe2, deposited on epitaxial graphene, is studied by scanning tunneling microscopy and spectroscopy at temperatur…
Magnitude of the Current in Two-Dimensional Interlayer Tunneling Devices
Randall M. Feenstra, Sergio C. de la Barrera, Jun Li +2
Using the Bardeen tunneling method with first-principles wave functions, computations are made of the tunneling current in graphene / hexagonal-boron-nitride / graphene (G/h-BN/G)…