366 citations · 617 across the 9 of their papers we have counts for
9 papers
Hysteresis Measurements as a Diagnostic Tool: A Systematic Approach for Stability Benchmarking and Performance Projection of 2D-Materials-Based MOSFETs
Alexander Karl, Dominic Waldhoer, Theresia Knobloch +19
Judging by its omnipresence in the literature, the hysteresis observed in the transfer characteristics of emerging transistors based on 2D-materials is widely accepted as an import…
Investigation of Low Frequency Noise in CryoCMOS devices through Statistical Single Defect Spectroscopy
Edoardo Catapano, Anirudh Varanasi, Philippe Roussel +9
High 1/f noise in CryoCMOS devices is a critical parameter to keep under control in the design of complex circuits for low temperatures applications. Current models predict the 1/f…
Time-Gated Optical Spectroscopy of Field-Effect Stimulated Recombination via Interfacial Point Defects in Fully-Processed Silicon Carbide Power MOSFETs
Maximilian W. Feil, Magdalena Weger, Hans Reisinger +10
Fully-processed SiC power metal-oxide-semiconductor field-effect transistors (MOSFETs) emit light during switching of the gate terminal, while both drain and source terminals are g…
Variability and Reliability of Graphene Field-Effect Transistors with CaF2 Insulators
Yury Yu. Illarionov, Theresia Knobloch, Burkay Uzlu +11
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequenc…
Comphy v3.0 -- A Compact-Physics Framework for Modeling Charge Trapping Related Reliability Phenomena in MOS Devices
Dominic Waldhoer, Christian Schleich, Jakob Michl +9
Charge trapping plays an important role for the reliability of electronic devices and manifests itself in various phenomena like bias temperature instability (BTI), random telegrap…
Optimizing the Stability of FETs Based on Two-Dimensional Materials by Fermi Level Tuning
Theresia Knobloch, Burkay Uzlu, Yury Yu. Illarionov +7
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability.…
On the suitability of hBN as an insulator for 2D material-based ultrascaled CMOS devices
Theresia Knobloch, Yury Yu. Illarionov, Fabian Ducry +8
Complementary metal oxide semiconductor (CMOS) logic circuits at the ultimate scaling limit place the utmost demands on the properties of all materials involved. The requirements f…
Meeting the Scaling Challenge for Post-Silicon Nanoelectronics using CaF2 Insulators
Yury Yu. Illarionov, Alexander G. Banshchikov, Dmitry K. Polyushkin +10
Two-dimensional (2D) semiconductors have been suggested both for ultimately-scaled field-effect transistors (FETs) and More-than-Moore nanoelectronics. However, these targets can n…
NBTI in Nanoscale MOSFETs - The Ultimate Modeling Benchmark
Tibor Grasser, Karina Rott, Hans Reisinger +3
After nearly half a century of research into the bias temperature instability (BTI), two classes of models have emerged as the strongest contenders: one class of models, the reacti…